MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates
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منابع مشابه
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as well as the optical and electronic properties of the films as a function of V/III ratio and growth temperatures. The growth of InN films was conducted utilizing a vertical reactor with TMIn and NH3 as the Inand Nprecursors, respectively. Metallic droplet-free InN films were achieved on GaN/sapphire templat...
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Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nanopatterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15 nm low-temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of ...
متن کاملMetalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface morphology of these MOVPE-grown AlInN thin films were examined. The surface morphologies of the samples we...
متن کاملOptical properties of InN grown on templates with controlled surface polarities
The structural and optical properties of InN layers grown on GaN/sapphire templates with controlled Ga-/N-polar surfaces are investigated. Raman spectroscopy and XRD reciprocal space map analysis suggest that the InN layers were grown strain free with a high crystal quality. A line shape analysis of the A1(LO) Raman mode yields to a decreasing carrier concentration for the sample grown on Ga-po...
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